Characterisation and modelling of chalcopyrite solar cells

被引：262
作者：
Klenk, R [1 ]
机构：
[1] Hahn Meitner Inst Kernforsch Berlin GmbH, D-14109 Berlin, Germany
来源：
THIN SOLID FILMS | 2001年 / 387卷 / 1-2期
关键词：
chalcopyrite; heterojunction; recombination; numerical modelling;
D O I：
10.1016/S0040-6090(00)01736-3
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this contribution, we have discussed current models of the chalcopyrite-based heterojunction solar cell and their implications for achieving reliable and efficient devices. Numerical simulation of the device is an important tool for assessing the influence of various parameters. It has been used here to provide examples for the topics discussed. The key points for the minimisation of interface recombination are: doping of absorber and window electrical charge and band line-up at the interface. and interface recombination velocity. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：135 / 140
页数：6
相关论文
共 25 条
  • [1] [Anonymous], 1994, P 12 EUR PVSE
  • [2] [Anonymous], 1994, Proc. 12th European Photovoltaic Solar Energy Conf
  • [3] Modelling polycrystalline semiconductor solar cells
    Burgelman, M
    Nollet, P
    Degrave, S
    [J]. THIN SOLID FILMS, 2000, 361 : 527 - 532
  • [4] Sues on the chalcopyrite/defect-chalcopyrite junction model for high-efficiency Cu(In,Ga)Se-2 solar cells
    Contreras, MA
    Wiesner, H
    Tuttle, J
    Ramanathan, K
    Noufi, R
    [J]. SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1997, 49 (1-4) : 239 - 247
  • [5] Current transport in CuInS2:Ga/Cds/Zno -: solar cells
    Hengel, I
    Neisser, A
    Klenk, R
    Lux-Steiner, MC
    [J]. THIN SOLID FILMS, 2000, 361 : 458 - 462
  • [6] Observation of intermixing at the buried CdS/Cu(In,Ga)Se2 thin film solar cell heterojunction
    Heske, C
    Eich, D
    Fink, R
    Umbach, E
    van Buuren, T
    Bostedt, C
    Terminello, LJ
    Kakar, S
    Grush, MM
    Callcott, TA
    Himpsel, FJ
    Ederer, DL
    Perera, RCC
    Riedl, W
    Karg, F
    [J]. APPLIED PHYSICS LETTERS, 1999, 74 (10) : 1451 - 1453
  • [7] Transient capacitance spectroscopy of defect levels in CIGS devices
    Igalson, M
    Zabierowski, P
    [J]. THIN SOLID FILMS, 2000, 361 : 371 - 377
  • [8] LINCOT D, 1991, P 10 EUR PHOT SOL EN, V93, P1
  • [9] MEYER N, 2000, IN PRESS P 16 EUR PH
  • [10] MINEMOTO T, 2000, IN PRESS P 16 EUR PH
123