Selective deposition of diamond film on glass substrate via the enhancement of the diamond nucleation density by the cyclic process

被引:3
|
作者
Kim, SH [1 ]
Kim, TG
Kim, YH
Kim, DU
Lee, SK
Hosomi, T
Maki, T
Kobayashi, T
机构
[1] Silla Univ, Dept New Mat Chem, Pusan 617736, South Korea
[2] Korea Univ, Dept Phys, Seoul 136701, South Korea
[3] Taegu Natl Univ Educ, Dept Sci Educ, Taegu 705715, South Korea
[4] Pusan Natl Univ, Dept Chem, Pusan 609735, South Korea
[5] Osaka Univ, Fac Engn Sci, Div Adv Elect & Opt Sci, Toyonaka, Osaka 5608531, Japan
关键词
D O I
10.1149/1.1350679
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Diamond films were deposited on the pretreated silicon or on the pretreated glass substrate in a microwave plasma enhanced chemical vapor deposition (MPECVD) system. We can increase the diamond nucleation density by the cyclic process, irrespective of the substrate kinds and deposition conditions. Using the cyclic process, we can certainly enhance the selective deposition of diamond film on glass substrate. The cyclic process is the in situ method carried out by the cyclic modulation of the CH, source gas flow rate during the initial deposition stage. Surface morphologies and diamond qualities of the films have been investigated. Based on these results, we discuss the cause for the enhancement of the selectivity of diamond film deposition on glass substrate by the cyclic process. (C) 2001 The Electrochemical Society.
引用
收藏
页码:C247 / C251
页数:5
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