Enhancement effect of Tb-related luminescence in AlxGa1-xN with the AlN molar fraction 0≤x≤1

被引：20

作者：

Wakahara, A ^{[1
]}

Nakanishi, Y

Fujiwara, T

Yoshida, A

Ohshima, T

Kamiya, T

机构：

[1] Toyohashi Univ Technol, Dept Elect & Elect Engn, Toyohashi, Aichi 4418580, Japan

[2] JAERI Takasaki, Takasaki, Gumma 3701292, Japan

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2005年 / 202卷 / 05期

关键词：

D O I：

10.1002/pssa.200461430

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Effects of Al composition on luminescence properties corresponding to Tb3+ inner level transitions are investigated. When the Al composition is larger than 0.3, luminescence corresponding to D-5(4) - F-7(j) (J = 3, 4, 5, 6) transitions is observed at room temperature, while D-5(3) - F-7(j) transition such as D-5(3) - F-7(5) can be observed only at low temperature. As the Al composition increases, the luminescence intensity is increased super linearly at first, and then linearly increased. Thermal quenching of luminescence intensity is dramatically improved as increasing the Al composition. Major effect of AlGaN is well explained by reduction of energy-back-transfer process. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：863 / 867

页数：5

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