Surface barrier analysis of semi-insulating and n+-type GaAs(001) following passivation with n-alkanethiol SAMs

被引：7

作者：

Marshall, Gregory M. ^{[1
]}

Bensebaa, Farid ^{[2
]}

Dubowski, Jan J. ^{[1
]}

机构：

[1] Univ Sherbrooke, Dept Elect & Comp Engn, Lab Quantum Semicond & Photon Based BioNanotechno, Sherbrooke, PQ J1K 2R1, Canada

[2] Natl Res Council Canada, Inst Chem Proc & Environm Technol, Ottawa, ON K1A 0R6, Canada

来源：

APPLIED SURFACE SCIENCE | 2011年 / 257卷 / 09期

关键词：

Self-assembled monolayers; X-ray photoelectron spectroscopy; Surface Fermi level; GaAs; SELF-ASSEMBLED MONOLAYERS; BARE SEMICONDUCTOR SURFACES; DEFECT MODEL; GAAS; 001; INTERFACE; TRANSPORT; JUNCTIONS; LEVEL;

D O I：

10.1016/j.apsusc.2010.12.084

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The surface Fermi level of semi-insulating and n(+)-type GaAs(0 0 1) was determined before and after passivation with n-alkanethiol self-assembled monolayers (SAMs) by X-ray photoelectron spectroscopy. Fermi level positioning was achieved using Au calibration pads integrated directly onto the GaAs surface, prior to SAM deposition, in order to provide a surface equipotential binding energy reference. Fermi level pinning within 50meV and surface barrier characteristics according to the Advanced Unified Defect Model were observed. Our results demonstrate the effectiveness of the Au integration technique for the determination of band-edge referenced Fermi level positions and are relevant to an understanding of emerging technologies based on the molecular-semiconductor junction. (C) 2010 Elsevier B. V. All rights reserved.

引用

页码：4543 / 4546

页数：4

共 20 条

[11] COMPENSATION MECHANISMS IN GAAS [J].