High-Performance Single-Crystal-Like Nanowire Poly-Si TFTs With Spacer Patterning Technique

被引：14

作者：

Kang, Tsung-Kuei ^{[1
,3
]}

Liao, Ta-Chuan ^{[2
]}

Lin, Chia-Min ^{[1
]}

Liu, Han-Wen ^{[4
]}

Cheng, Huang-Chung ^{[2
,3
]}

机构：

[1] Feng Chia Univ, Dept Elect Engn, Taichung 40724, Taiwan

[2] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[3] Natl Tsing Hua Univ, Inst Elect, Hsinchu 300, Taiwan

[4] Natl Chung Hsing Univ, Dept Elect Engn, Taichung 402, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 03期

关键词：

Field-effect mobility; nanowire; sequential-lateral-solidification (SLS); single-crystalline-like; spacer patterning; tri-gated structure; SEQUENTIAL LATERAL SOLIDIFICATION; THIN-FILM-TRANSISTOR; CRYSTALLIZATION;

D O I：

10.1109/LED.2010.2099198

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, high-performance single-crystal-like nanowire poly-Si TFTs with simple spacer patterning technique were demonstrated and characterized. Due to the nanoscale dimension formed by spacer patterning technique, each nanowire is easily transformed within one crystalline grain of the standard sequential-lateral-solidification (SLS) poly-Si film with the regularly arranged grains and thus performed with a single-crystallike device channel. Due to the high-crystallinity channel, together with the tri-gated structure, the fabricated devices revealed good device integrity of high field-effect mobility of 477 cm(2)/V . s and good ON/OFF current ratio of 1.07 x 10(8).

引用

页码：330 / 332

页数：3

共 17 条

[1] Corner effect in double and triple gate FinFETs [J].

Burenkov, A ;

Lorenz, J .

ESSDERC 2003: PROCEEDINGS OF THE 33RD EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2003, :135-138

[2] Low-temperature single-crystal Si TFT's fabricated on Si films processed via sequential lateral solidification [J].

Crowder, MA ;

Carey, PG ;

Smith, PM ;

Sposili, RS ;

Cho, HS ;

Im, JS .

IEEE ELECTRON DEVICE LETTERS, 1998, 19 (08) :306-308

[3]

DOYLE B, 2003, VLSI S, P133

[4] Low-temperature polysilicon thin-film transistors fabricated from laser-processed sputtered-silicon films [J].

Giust, GK ;

Sigmon, TW ;

Carey, PG ;

Weiss, B ;

Davis, GA .

IEEE ELECTRON DEVICE LETTERS, 1998, 19 (09) :343-344

[5] High-performance laser-processed polysilicon thin-film transistors [J].

Giust, GK ;

Sigmon, TW ;

Boyce, JB ;

Ho, J .

IEEE ELECTRON DEVICE LETTERS, 1999, 20 (02) :77-79

[6] Single-crystal Si films for thin-film transistor devices [J].

Im, JS ;

Sposili, RS ;

Crowder, MA .

APPLIED PHYSICS LETTERS, 1997, 70 (25) :3434-3436

[7] PHASE-TRANSFORMATION MECHANISMS INVOLVED IN EXCIMER-LASER CRYSTALLIZATION OF AMORPHOUS-SILICON FILMS [J].

IM, JS ;

KIM, HJ ;

THOMPSON, MO .

APPLIED PHYSICS LETTERS, 1993, 63 (14) :1969-1971

[8] Crystalline Si films for integrated active-matrix liquid-crystal displays [J].

Im, JS ;

Sposili, RS .

MRS BULLETIN, 1996, 21 (03) :39-48

[9] Multiple-gate CMOS thin-film transistor with polysilicon nanowire [J].

Im, Maesoon ;

Han, Jin-Woo ;

Lee, Hyunjin ;

Yu, Lee-Eun ;

Kim, Sungho ;

Kim, Chang-Hoon ;

Jeon, Sang Cheol ;

Kim, Kwang Hee ;

Lee, Gi Sung ;

Oh, Jae Sub ;

Park, Yun Chang ;

Lee, Hee Mok ;

Choi, Yang-Kyu .

IEEE ELECTRON DEVICE LETTERS, 2008, 29 (01) :102-105

[10] Novel gate-all-around poly-Si TFTs with multiple nanowire channels [J].

Liao, Ta-Chuan ;

Tu, Shih-Wei ;

Yu, Ming H. ;

Lin, Wei-Kai ;

Liu, Cheng-Chin ;

Chang, Kuo-Jui ;

Tai, Ya-Hsiang ;

Cheng, Huang-Chung .

IEEE ELECTRON DEVICE LETTERS, 2008, 29 (08) :889-891

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