Influence of the local structure in phase-change materials on their dielectric permittivity

被引：4

作者：

Shportko, Kostiantyn V. ^{[1
,2
]}

Venger, Eugen F. ^{[2
]}

机构：

[1] RWTH Univ Technol Aachen, Inst Phys IA, D-52056 Aachen, Germany

[2] NAS Ukraine, VE Lashkarev Inst Semicond Phys, Dept Semicond Heterostruct, UA-03028 Kiev, Ukraine

来源：

NANOSCALE RESEARCH LETTERS | 2015年 / 10卷

关键词：

Phase-change materials; Phonon; Dielectric function; MEMORY;

D O I：

10.1186/s11671-015-0735-4

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Ge-Sb-Te alloys, which belong to the phase-change materials, are promising materials for data storage and display and data visualization applications due to their unique properties. This includes a remarkable difference of their electrical and optical properties in the amorphous and crystalline state. Pronounced change of optical properties for Ge-Sb-Te alloys is linked to the different bonding types and different atomic arrangements in amorphous and crystalline states. The dielectric function of phase-change materials has been investigated in the far infrared (FIR) range. Phonons have been detected by FTIR spectroscopy. Difference of the dispersion of the dielectric permittivity of amorphous and crystalline samples is caused by different structures in different states which contribute to the dielectric permittivity.

引用

页数：4

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