Enhancement of UV luminescence in sol-gel prepared ZnO thin films by incorporation of Mg

被引：13

作者：

Chakrabarti, S ^{[1
]}

Kar, S ^{[1
]}

Dev, A ^{[1
]}

Chaudhuri, S ^{[1
]}

机构：

[1] Indian Assoc Cultivat Sci, Dept Mat Sci, Kolkata 700032, W Bengal, India

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2005年 / 202卷 / 03期

关键词：

D O I：

10.1002/pssa.200406925

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Well-crystallized MgxZn1-xO films were deposited on quartz substrates by sol-gel technique with a variation of x value from 0 to 0.15. The samples were annealed at different temperatures (500 degrees C to 700 degrees C) in air and oxygen atmosphere to study the effect of annealing atmosphere on the luminescence properties of the films. The optical, microstructural and photoluminescence properties of the films were studied. It was found that the band gap of the films increased with increasing Mg concentration (x value). A remarkable change in the photoluminescence spectra of the films for x = 0.05 was observed by varying the annealing atmosphere. Highly intense UV emission at room temperature could be obtained by annealing the Mg0.05Zn0.95O film in static oxygen atmosphere, while the intensity of the visible defect related luminescence could be reduced, resulting in a high intensity ratio (similar to 100) of the two. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：441 / 448

页数：8

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