Quantum metallicity in a two-dimensional insulator

被引:52
作者
Butko, VY
Adams, PW [1 ]
机构
[1] Louisiana State Univ, Dept Phys & Astron, Baton Rouge, LA 70803 USA
[2] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
关键词
D O I
10.1038/35051516
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
One of the most far-reaching problems in condensed-matter physics is to understand how interactions between electrons, and the resulting correlations, affect the electronic properties of disordered two-dimensional systems. Extensive experimental (1-6) and theoretical (7-11) studies have shown that interaction effects are enhanced by disorder, and that this generally results in a depletion of the density of electronic states. In the limit of strong disorder, this depletion takes the form of a complete gap(12,13) in the density of states. It is known that this `Coulomb gap' can turn a pure metal film that is highly disordered into a poorly conducting insulator(14), but the properties of these insulators are not well understood. Here we investigate the electronic properties of disordered beryllium films, with the aim of disentangling the effects of the Coulomb gap and the underlying disorder. We show that the gap is suppressed by a magnetic field and that this drives the strongly insulating beryllium films into a low-temperature `quantum metal' phase with resistance near the quantum resistance R-Q = h/e(2), where h is Planck's constant and e is the electron charge.
引用
收藏
页码:161 / 164
页数:5
相关论文
共 20 条
  • [1] First-order spin-paramagnetic transition and tricritical point in ultrathin Be films
    Adams, PW
    Herron, P
    Meletis, EI
    [J]. PHYSICAL REVIEW B, 1998, 58 (06): : R2952 - R2955
  • [2] Altshuler B., 1987, SOV SCI REV A, V9, P223
  • [3] ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS
    ANDO, T
    FOWLER, AB
    STERN, F
    [J]. REVIEWS OF MODERN PHYSICS, 1982, 54 (02) : 437 - 672
  • [4] THE ANDERSON-MOTT TRANSITION
    BELITZ, D
    KIRKPATRICK, TR
    [J]. REVIEWS OF MODERN PHYSICS, 1994, 66 (02) : 261 - 390
  • [5] MAGNETORESISTANCE IN SI METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS - EVIDENCE OF WEAK LOCALIZATION AND CORRELATION
    BISHOP, DJ
    DYNES, RC
    TSUI, DC
    [J]. PHYSICAL REVIEW B, 1982, 26 (02): : 773 - 779
  • [6] Coulomb gap: How a metal film becomes an insulator
    Butko, VY
    DiTusa, JF
    Adams, PW
    [J]. PHYSICAL REVIEW LETTERS, 2000, 84 (07) : 1543 - 1546
  • [7] Tenfold magnetoconductance in a nonmagnetic metal film
    Butko, VY
    DiTusa, JF
    Adams, PW
    [J]. PHYSICAL REVIEW LETTERS, 2000, 85 (01) : 162 - 165
  • [8] Das Sarma S., 1997, PERSPECTIVES QUANTUM
  • [9] GERSHENZON ME, 1985, JETP LETT+, V41, P534
  • [10] ELECTRON-TUNNELING INTO STRONGLY DISORDERED FILMS - THE INFLUENCE OF STRUCTURE ON ELECTRON-ELECTRON INTERACTIONS
    HSU, SY
    VALLES, JM
    [J]. PHYSICAL REVIEW B, 1994, 49 (23): : 16600 - 16604