Evidence of Hot-Hole Induced Degradation in Lateral NDRIFT MOSFET: Characterization and TCAD Analysis

被引：0

作者：

Oldani, Luca ^{[1
]}

Rossetti, Mattia ^{[1
]}

Alagi, Filippo ^{[1
]}

Atzeni, Laura ^{[1
]}

Borella, Fabio ^{[1
]}

Brazzelli, Silvia ^{[1
]}

机构：

[1] STMicroelectronics, Smart Power Technol R&D, I-20010 Cornaredo, Italy

来源：

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 2022年 / 22卷 / 02期

关键词：

Degradation; Logic gates; Hot carriers; Voltage measurement; Interface states; Stress; Semiconductor device measurement; Hot carrier degradation; LDMOSFET; hot-holes; DCIV; Ron degradation; capacitance degradation; ELECTRON-MOBILITY DEGRADATION; REMOTE COULOMB SCATTERING; CARRIER DEGRADATION; INTERFACE TRAPS; INJECTION; OXIDE; STI; TRANSISTORS; DCIV; SIMULATION;

D O I：

10.1109/TDMR.2022.3163537

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The role of secondary hot holes in the degradation of n-channel lateral drift MOSFETs, possibly leading to gate oxide breakdown, is discussed. Trapping of positive charges in the gate and field oxides and the formation of interface states under hot-carrier stress (HCS) have been successfully monitored by means of direct current current-voltage (DCIV) measurements and through gate-drain capacitance measurements. Experimental data have been complemented with Technology Computer Aided Design (TCAD) analysis. A degradation model including both hot-electrons and secondary hot-holes induced degradation capable of interpreting and reproducing measured data is proposed. Simulations allow to gain insights in the kinetics laws governing charge trapping and interface states generation along the silicon/oxide interface. The drift kinetics of the ON-state resistance have been also characterized and reproduced by simulations.

引用

页码：258 / 266

页数：9

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