Fabrication and Characterization of the Charge-Plasma Diode

被引：204
|
作者：
Rajasekharan, Bijoy [1 ]
Hueting, Raymond J. E. [1 ]
Salm, Cora [1 ]
van Hemert, Tom [1 ]
Wolters, Rob A. M. [1 ,2 ]
Schmitz, Jurriaan [1 ]
机构：
[1] Univ Twente, MESA Inst Nanotechnol, NL-7500 AE Enschede, Netherlands
[2] NXP Semicond, NL-5600 KA Eindhoven, Netherlands
来源：
IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 06期
关键词：
Buried oxide (BOX); charge-plasma (CP) diode; diode; p-i-n diode; Schottky barrier; silicon-on-insulator (SOI); PERFORMANCE;
D O I：
10.1109/LED.2010.2045731
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present a new lateral Schottky-based rectifier called the charge-plasma diode realized on ultrathin silicon-on-insulator. The device utilizes the workfunction difference between two metal contacts, palladium and erbium, and the silicon body. We demonstrate that the proposed device provides a low and constant reverse leakage-current density of about 1 fA/mu m with ON/OFF current ratios of around 10(7) at 1-V forward bias and room temperature. In the forward mode, a current swing of 88 mV/dec is obtained, which is reduced to 68 mV/dec by back-gate biasing.
引用
收藏
页码：528 / 530
页数：3
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