Fabrication and Characterization of the Charge-Plasma Diode

被引：204

作者：

Rajasekharan, Bijoy ^{[1
]}

Hueting, Raymond J. E. ^{[1
]}

Salm, Cora ^{[1
]}

van Hemert, Tom ^{[1
]}

Wolters, Rob A. M. ^{[1
,2
]}

Schmitz, Jurriaan ^{[1
]}

机构：

[1] Univ Twente, MESA Inst Nanotechnol, NL-7500 AE Enschede, Netherlands

[2] NXP Semicond, NL-5600 KA Eindhoven, Netherlands

来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 06期

关键词：

Buried oxide (BOX); charge-plasma (CP) diode; diode; p-i-n diode; Schottky barrier; silicon-on-insulator (SOI); PERFORMANCE;

D O I：

10.1109/LED.2010.2045731

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a new lateral Schottky-based rectifier called the charge-plasma diode realized on ultrathin silicon-on-insulator. The device utilizes the workfunction difference between two metal contacts, palladium and erbium, and the silicon body. We demonstrate that the proposed device provides a low and constant reverse leakage-current density of about 1 fA/mu m with ON/OFF current ratios of around 10(7) at 1-V forward bias and room temperature. In the forward mode, a current swing of 88 mV/dec is obtained, which is reduced to 68 mV/dec by back-gate biasing.

引用

页码：528 / 530

页数：3

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