Controlled growth of Bi-based cuprate whiskers

被引：4

作者：

Matsubara, I ^{[1
]}

Funahashi, R ^{[1
]}

Miyaji, N ^{[1
]}

Ueno, K ^{[1
]}

Ishikawa, H ^{[1
]}

机构：

[1] OSAKA ELECTROCOMMUN UNIV, NEYAGAWA, OSAKA 572, JAPAN

来源：

BULLETIN OF THE CHEMICAL SOCIETY OF JAPAN | 1996年 / 69卷 / 01期

关键词：

D O I：

10.1246/bcsj.69.107

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Cuprate whiskers with differen:crystal phases, Bi2Sr2CuOx (Bi-2201) and Bi4Sr8Cu5Ox (Bi-485), have been obtained by heating melt-quenched glass precursors. The crystal phase of the grown whiskers were controllable by changing the precursor composition and heating conditions. The Bi-2201 whiskers were identified to be of the R-phase, written in a general formula as Bi2+xSr2-xCuOy. The hole concentration of the as-grown Bi-2201 whiskers was also controlled from the underdoped to the overdoped state by changing the precursor composition. The temperature dependence of resistivity changed from a semiconducting to a metallic behavior corresponding to the hole concentration.

引用

页码：107 / 110

页数：4

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