Tunnel Magnetoresistance and Temperature Related Effects in Magnetic Tunnel Junctions with Embedded Nanoparticles

被引：4

作者：

Useinov, Arthur ^{[1
,2
,3
]}

Lai, Chih-Huang ^{[2
]}

机构：

[1] Natl Tsing Hua Univ, Dept Phys, 101,Sect 2,KungFu Rd, Hsinchu 30013, Taiwan

[2] Natl Tsing Hua Univ, Dept Mat Sci & Engn, 101,Sect 2,KungFu Rd, Hsinchu 30013, Taiwan

[3] Kazan Fed Univ, Dept Solid State Phys, 18 Kremlyovskaya St, Kazan 420008, Russia

来源：

SPIN | 2016年 / 6卷 / 01期

关键词：

Tunnel magnetoresistance; Kondo effects; quantized conductance; magnetic tunnel junctions with embedded nanoparticles; CONTACTS;

D O I：

10.1142/S2010324716500016

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Temperature dependence of the tunnel magnetoresistance (TMR) was calculated in range of the quantum-ballistic model in the magnetic tunnel junction (MTJ) with embedded nanoparticles (NPs). The electron tunnel transport through NP was simulated in range of double barrier approach, which was integrated into the model of the magnetic point-like contact. The resonant TMR conditions and temperature impact were explored in detail. Moreover, the possible reasons of the temperature induced resonant conditions were discussed in the range of the lead-tunneling cell (TC)-lead model near Kondo temperature. We also found that redistribution of the voltage drop becomes crucial in this model. Furthermore, the direct tunneling plays the dominant role and cannot be omitted in the quantum systems with the total tunneling thickness up to 5-6 nm. Hence, Coulomb blockade model cannot explain Kondo-induced TMR anomalies in nanometer-sized tunnel junctions.

引用

页数：7

共 18 条

[1] Competition between cotunneling, Kondo effect, and direct tunneling in discontinuous high-anisotropy magnetic tunnel junctions [J].

Ciudad, D. ;

Wen, Z. -C. ;

Hindmarch, A. T. ;

Negusse, E. ;

Arena, D. A. ;

Han, X. -F. ;

Marrows, C. H. .

PHYSICAL REVIEW B, 2012, 85 (21)

[2] From the Kondo regime to the mixed-valence regime in a single-electron transistor [J].

Goldhaber-Gordon, D ;

Göres, J ;

Kastner, MA ;

Shtrikman, H ;

Mahalu, D ;

Meirav, U .

PHYSICAL REVIEW LETTERS, 1998, 81 (23) :5225-5228

[3] Kondo effect in the presence of itinerant-electron ferromagnetism studied with the numerical renormalization group method -: art. no. 247202 [J].

Martinek, J ;

Sindel, M ;

Borda, L ;

Barnas, J ;

König, J ;

Schön, G ;

von Delft, J .

PHYSICAL REVIEW LETTERS, 2003, 91 (24)

[4] Size-dependent electrical constriction resistance for contacts of arbitrary size: from Sharvin to Holm limits [J].

Mikrajuddin, A ;

Shi, FG ;

Kim, HK ;

Okuyama, K .

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 1999, 2 (04) :321-327

[5] Kondo effect in quantum dots [J].

Pustilnik, M ;

Glazman, L .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2004, 16 (16) :R513-R537

[6]

SHARVIN YV, 1965, SOV PHYS JETP-USSR, V21, P655

[7] Giant magnetoresistance in quantum magnetic contacts [J].

Tagirov, LR ;

Vodopyanov, BP ;

Garipov, BM .

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2003, 258 :61-66

[8] Electrical conduction through small contact spots [J].

Timsit, RS .

ELECTRICAL CONTACTS-2004: PROCEEDINGS OF THE 50TH IEEE HOLM CONFERENCE ON ELECTRICAL CONTACTS/THE 22ND INTERNATIONAL CONFERENCE ON ELECTRICAL CONTACTS, 2004, :184-191

[9] Impact of lattice strain on the tunnel magnetoresistance in Fe/insulator/Fe and Fe/insulator/La0.67Sr0.33MnO3 magnetic tunnel junctions [J].

Useinov, A. ;

Saeed, Y. ;

Singh, N. ;

Useinov, N. ;

Schwingenschloegl, U. .

PHYSICAL REVIEW B, 2013, 88 (06)

[10] Giant magnetoresistance in nanoscale ferromagnetic heterocontacts [J].

Useinov, A. N. ;

Deminov, R. G. ;

Tagirov, L. R. ;

Pan, G. .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2007, 19 (19)

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