Fluorine-free and fluorine containing MOCVD precursors for electronic oxides:: a comparison

被引:10
作者
Bedoya, C
Condorelli, GG
Di Mauro, A
Anastasi, G
Fragalà, IL
Lisoni, JG
Wouters, D
机构
[1] Univ Catania, Dipartimento Sci Chim, I-95124 Catania, Italy
[2] IMEC, B-3001 Louvain, Belgium
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2005年 / 118卷 / 1-3期
关键词
MOCVD; strontium; beta-diketonates; fluorine;
D O I
10.1016/j.mseb.2004.12.045
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
MOCVD processes adopting two different precursors Sr(tmhd)(2)pmdeta and Sr(hfac)(2)tetraglyme have been compared. In situ FT-IR monitoring shows that Sr(hfac)(2)tetraglyme posses suitable thermal stability upon sublimation and good mass-transport properties. By contrast, Sr(tmhd)(2)pmdeta posses lower stability which precludes efficient sublimation/evaporation processes, thus requiring reactors equipped with liquid delivery systems for efficient MOCVD processes. Insights on the MOCVD process have been obtained combining in situ FT-IR and ex situ XRD, XPS, SEM and EDX techniques. Homogeneous films have been deposited on Pt/TiN/SiO2/Si substrates in the 300-500 degrees C temperature range. XRD and XPS analyses have shown that fluorine or carbonate containing films are obtained adopting Sr(hfac)(2)tetraglyme or Sr(dpM)(2)pmdeta, respectively. (c) 2004 Published by Elsevier B.V.
引用
收藏
页码:264 / 269
页数:6
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