Non-Volatile Photochemical Gating of an Epitaxial Graphene/Polymer Heterostructure

被引：121

作者：

Lara-Avila, Samuel ^{[1
]}

Moth-Poulsen, Kasper ^{[2
]}

Yakimova, Rositza ^{[3
]}

Bjornholm, Thomas ^{[4
,5
]}

Fal'ko, Vladimir ^{[6
]}

Tzalenchuk, Alexander ^{[7
]}

Kubatkin, Sergey ^{[1
]}

机构：

[1] Chalmers, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden

[2] Univ Calif Berkeley, Coll Chem, Berkeley, CA 94720 USA

[3] Linkoping Univ, Dept Phys Chem & Biol IFM, S-58183 Linkoping, Sweden

[4] Univ Copenhagen, Nanosci Ctr, DK-2100 Copenhagen O, Denmark

[5] Univ Copenhagen, Dept Chem, DK-2100 Copenhagen O, Denmark

[6] Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England

[7] Natl Phys Lab, Teddington TW11 0LW, Middx, England

来源：

ADVANCED MATERIALS | 2011年 / 23卷 / 07期

基金：

英国工程与自然科学研究理事会; 瑞典研究理事会;

关键词：

BILAYER GRAPHENE; TRANSISTORS;

D O I：

10.1002/adma.201003993

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A novel heterostructure based on epitaxial graphene grown on silicon carbide combined with two polymers is demonstrated, with a neutral spacer and a photoactive layer that provides potent electron acceptors under UV light exposure. UV exposure of this heterostructure enables control of the electrical parameters of graphene in a non-invasive, non-volatile, and reversible way.

引用

页码：878 / +

页数：6

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