Monitoring of (reactive) ion etching (RIE) with reflectance anisotropy spectroscopy (RAS) equipment

被引：10

作者：

Barzen, Lars ^{[1
]}

Richter, Johannes ^{[1
]}

Fouckhardt, Henning ^{[1
]}

Wahl, Michael ^{[2
]}

Kopnarsk, Michael ^{[2
]}

机构：

[1] Kaiserslautern Univ Technol, Dept Phys, Res Grp Integrated Optoelect & Microopt IOE, D-67653 Kaiserslautern, Germany

[2] Ins Oberflachen & Schichtanalyt IFOS GmbH, D-67663 Kaiserslautern, Germany

来源：

APPLIED SURFACE SCIENCE | 2015年 / 328卷

关键词：

Reflectance anisotropy spectroscopy (RAS); Reflectance difference spectroscopy (RDS); (Reactive); ion; beam); etching; (IE; IBE; RIE; RIBE); Etch depth monitoring; III V semiconductor dry etching; CHEMICAL-VAPOR-DEPOSITION; CONTROLLING EPITAXIAL-GROWTH; MOLECULAR-BEAM-EPITAXY; IN-SITU; 001; GAAS; DIFFERENCE SPECTROSCOPY; CUBIC SEMICONDUCTORS; OPTICAL-REFLECTANCE; ELLIPSOMETRY; REFLECTOMETRY;

D O I：

10.1016/j.apsusc.2014.12.038

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Experimental results on the application of reflectance anisotropy spectroscopy (RAS) to the monitoring of (reactive) ion etching of monocrystalline semiconductor samples are described. To show the potential of this technique RAS signals collected during etching of GaAs/AlxGa1-xAs multilayer samples are compared to RAS data obtained before during molecular-beam epitaxial (MBE) growth of these very samples. A change of the RIE-RAS spectrum can be attributed to a change of material composition. And the current etch depth can be monitored with an accuracy at least down to several tens of nanometers -f. e. by recording the average reflected intensity. (C) 2014 Elsevier B. V. All rights reserved.

引用

页码：120 / 124

页数：5

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