A surface potential based subthreshold drain current model for short-channel MOS transistors

被引：2

作者：

Baishya, S. ^{[1
]}

Mallik, A.

Sarkar, C. K.

机构：

[1] Natl Inst Technol NIT, Dept Elect & Telecommun Engn, Silchar 788010, India

[2] Univ Calcutta, Dept Elect Sci, Kolkata 700009, W Bengal, India

[3] Jadavpur Univ, Dept Elect & Telecommun Engn, Kolkata 700032, W Bengal, India

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2007年 / 22卷 / 09期

关键词：

D O I：

10.1088/0268-1242/22/9/015

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Utilizing the concept of the splitting of the quasi-Fermi energy on the surface, a surface potential based subthreshold drain current model for the short-channel MOS transistor is presented. Both the drift and diffusion components are considered in this model. The model is based on an accurate surface potential model that takes into account the varying depth of the channel depletion layer around the source and drain junction which is very important for short-channel devices. The model predictions are compared with the predictions by the 2D numerical device simulator DESSIS, and a very good agreement is obtained.

引用

页码：1066 / 1069

页数：4

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