A high voltage IGBT and diode chip set designed for the 2.8 kV DC link level with short circuit capability extending to the maximum blocking voltage

被引：6

作者：

Bauer, F ^{[1
]}

Kaminski, N ^{[1
]}

Linder, S ^{[1
]}

Zeller, H ^{[1
]}

机构：

[1] ABB Semicond AG, CH-5600 Lenzburg, Switzerland

来源：

12TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS - PROCEEDINGS | 2000年

关键词：

D O I：

10.1109/ISPSD.2000.856766

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the experimental characteristics of a high voltage IGBT and diode chip set designed for safe operation under hard switching conditions at the 2.8 kV DC link level. The fundamental goal of the design is a low cosmic ray induced failure rate for diodes as well as IGBTs at the DC link level. At the same time all the common requirements of low static and dynamic losses as well as wide SOA under turnoff, reverse recovery and short-circuit conditions are fulfilled. The blocking capability of these devices exceeds 4.5 kV by far.

引用

页码：29 / 32

页数：4