A high performance transparent resistive switching memory made from ZrO2/AlON bilayer structure

被引：59
|
作者：
Tsai, Tsung-Ling [1 ,2 ]
Chang, Hsiang-Yu [1 ,2 ]
Lou, Jesse Jen-Chung [3 ]
Tseng, Tseung-Yuen [1 ,2 ]
机构：
[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30010, Taiwan
[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu 30010, Taiwan
[3] Peking Univ, Sch Software & Microelect, Dept Energy Informat Engn, Wuxi 214125, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2016年 / 108卷 / 15期
关键词：
DEVICES; OXIDE; FILM;
D O I：
10.1063/1.4946006
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this study, the switching properties of an indium tin oxide (ITO)/zirconium oxide (ZrO2)/ITO single layer device and those of a device with an aluminum oxynitride (AlON) layer were investigated. The devices with highly transparent characteristics were fabricated. Compared with the ITO/ZrO2/ITO single layer device, the ITO/ZrO2/AlON/ITO bilayer device exhibited a larger ON/OFF ratio, higher endurance performance, and superior retention properties by using a simple two-step forming process. These substantial improvements in the resistive switching properties were attributed to the minimized influence of oxygen migration through the ITO top electrode (TE), which can be realized by forming an asymmetrical conductive filament with the weakest part at the ZrO2/AlON interface. Therefore, in the ITO/ZrO2/AlON/ITO bilayer device, the regions where conductive filament formation and rupture occur can be effectively moved from the TE interface to the interior of the device. Published by AIP Publishing.
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页数：4
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