1.26μm GaInNAsSb-SQW lasers grown by gas-source MBE

被引：0

作者：

Shimizu, H ^{[1
]}

Kumada, K ^{[1
]}

Uchiyama, S ^{[1
]}

Kasukawa, A ^{[1
]}

机构：

[1] Furukawa Elect Corp Ltd, Yokohama R&D Labs, Nishi Ku, Yokohama, Kanagawa 2200073, Japan

来源：

2001 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS | 2001年

关键词：

D O I：

10.1109/ICIPRM.2001.929128

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Long wavelength-GaInNAsSb SQW lasers that include small amount of Sb were successfully grown by gas-source molecular beam epitaxy (GSMBE). We confirmed that Sb reacts in highly strained GaInNAs/GaAs system like a surfactant, which increase the critical thickness at which the growth mode changes from the 2-dimentional (2-D) growth to the 3-dimentional (3-D) growth. The GaInNAsSb lasers oscillated under CW operation at 1.258 mum at room temperature. The low CW threshold current of 12.4mA and high characteristic temperature (T-0) of 157K were obtained for GaInNAsSb lasers, which is the best result for GaInNAs-based narrow stripe lasers.

引用

页码：342 / 345

页数：4

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