Inhomogeneous deformation and microstructure evolution of Sn-Ag-based solder interconnects during thermal cycling and shear testing

被引：62

作者：

Chen, Hongtao ^{[1
,2
]}

Han, Jing ^{[1
]}

Li, Jue ^{[3
]}

Li, Mingyu ^{[1
,2
]}

机构：

[1] Shenzhen Grad Sch, Harbin Inst Technol, Dept Mat Sci & Engn, Shenzhen 518055, Peoples R China

[2] Harbin Inst Technol, State Key Lab Adv Welding & Joining, Harbin 150001, Peoples R China

[3] Aalto Univ, Sch Sci & Technol, Dept Elect, FIN-00076 Aalto, Finland

来源：

MICROELECTRONICS RELIABILITY | 2012年 / 52卷 / 06期

基金：

美国国家科学基金会;

关键词：

LEAD-FREE SOLDERS; LOCALIZED RECRYSTALLIZATION; CRYSTAL ORIENTATION; SUBGRAIN ROTATION; GRAIN; STRAIN; TIN; GROWTH;

D O I：

10.1016/j.microrel.2012.01.009

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Orientation imaging microscopy was adopted to characterize the microstructural changes in Sn-Ag-based solder interconnects during thermal cycling and shear testing. The deformation and microstructure evolution of Sn-Ag-based solder interconnects are inhomogeneous, depending on the orientations of beta-Sn grains in the as-solidified microstructure. Recovery or recrystallization can take place even under pure shear stress at room temperature, and it tends to occur at high-angle grain boundaries in multi-grained solder interconnects, while it localizes in near-interface region in solder interconnects with only one grain inside. During thermal cycling, the hardness of recrystallized microstructure decreased significantly due to the segregation of Ag3Sn IMC particles towards the newly-formed recrystallized boundaries, increasing the ease of localized deformation in this weakened microstructure. As a consequence, cracks were propagated intergranularly in the recrystallized microstructure. (C) 2012 Elsevier Ltd. All rights reserved.

引用

页码：1112 / 1120

页数：9

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