Effect of Fluorination on Molecular Orientation of Conjugated Polymers in High Performance Field-Effect Transistors

被引：78

作者：

Zhang, Andong ^{[1
,4
]}

Xiao, Chengyi ^{[1
]}

Wu, Yang ^{[2
]}

Li, Cheng ^{[1
]}

Ji, Yunjing ^{[1
]}

Li, Lin ^{[3
]}

Hu, Wenping ^{[1
]}

Wang, Zhaohui ^{[1
]}

Ma, Wei ^{[2
]}

Li, Weiwei ^{[1
]}

机构：

[1] Chinese Acad Sci, Beijing Natl Lab Mol Sci, Inst Chem, CAS Key Lab Organ Solids, Beijing 10090, Peoples R China

[2] Xi An Jiao Tong Univ, State Key Lab Mech Behav Mat, Xian 710049, Peoples R China

[3] Beijing Normal Univ, Coll Chem, Beijing 100875, Peoples R China

[4] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

来源：

MACROMOLECULES | 2016年 / 49卷 / 17期

基金：

中国国家自然科学基金;

关键词：

THIN-FILM TRANSISTORS; CHARGE-CARRIER MOBILITY; N-TYPE; SOLAR-CELLS; SEMICONDUCTING POLYMERS; BACKBONE FLUORINATION; NAPHTHALENE DIIMIDE; PRINTED TRANSISTORS; AMORPHOUS-SILICON; ACCEPTOR POLYMER;

D O I：

10.1021/acs.macromol.6b01446

中图分类号：

O63 [高分子化学（高聚物）];

学科分类号：

070305 ; 080501 ; 081704 ;

摘要：

Fluorinated conjugated polymers have been widely used in high performance polymer solar cells, but they showed limited application in field-effect transistors (FETs). In this paper, we focus on the influence of fluorine atoms upon charge transport of conjugated polymers in FET devices. Two series of conjugated polymers without or with fluorine atoms were designed and applied into FETs. Nonfluorinated conjugated polymers show high hole mobilties up to 11.16 cm(2) V-1 s(1), while fluorinated polymers exhibit low hole mobilities below 1.80 cm(2) V-1 s(1). Further investigation by differential scanning calorimetry (DSC) and 2D grazing-incidence wide-angle X-ray scattering (2D-GIWAXS) reveal that fluorinated conjugated polymers show low crystallinity and face-on orientation in thin films, explaining their poor hole mobilities in FET devices. Our results clearly show how the chemical structures influence the charge transport properties, which can be used to design new conjugated polymers toward high performance FETs.

引用

页码：6431 / 6438

页数：8

共 58 条

[21] Boosting the Ambipolar Performance of Solution-Processable Polymer Semiconductors via Hybrid Side-Chain Engineering [J].