A 15-34 GHz Robust GaN based Low-Noise Amplifier with 0.8dB Minimum Noise Figure

被引：0

作者：

Zhang, Shiyong ^{[1
]}

Zheng, Penghui ^{[1
]}

Xu, Jianxing ^{[1
]}

Wang, Rong ^{[1
]}

Huang, Yang ^{[2
]}

Tong, Xiaodong ^{[1
]}

机构：

[1] China Acad Engn Phys, Microsyst & Terahertz Res Ctr, Inst Elect Engn, Chengdu, Peoples R China

[2] Sichuan YiFeng Elect Sci & Technol Co LTD, Chengdu, Peoples R China

来源：

2019 17TH IEEE INTERNATIONAL NEW CIRCUITS AND SYSTEMS CONFERENCE (NEWCAS) | 2019年

关键词：

Low noise amplifier; GaN on silicon; Noise figure; Robust; MMICS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this report, a broad band (15 GHz to 34 GHz) low noise amplifier using 100 nm GaN on silicon technology is designed and fabricated. The LNA shows an extremely low noise figure of 1.2 dB and small signal gain of 18.5 +/- 1.5 dB across the bandwidth. The LNA can work in the drain bias from 3.5 V to 8 V without increasing the noise figure. The chip size is 2 mm x 1.3 mm The robustness of the LNA is also tested by stressing the working LNA with a continuous-wave input power, no significant degradation is observed.

引用

页数：4

共 6 条

[1] Robust Stacked GaN-Based Low-Noise Amplifier MMIC for Receiver Applications [J].

Andrei, Cristina ;

Bengtsson, Olof ;

Doerner, Ralf ;

Chevtchenko, Serguei A. ;

Rudolph, Matthias .

2015 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2015,

[2]

Cuadrado-Calle D, 2014, IEEE MTTS INT MICRO, P301, DOI 10.1109/IMaRC.2014.7039046

[3] Ka-band ultra low noise MMIC amplifier using pseudomorphic HEMTs [J].

Fujimoto, S ;

Katoh, T ;

Ishida, T ;

Oku, T ;

Sasaki, Y ;

Ishikawa, T ;

Mitsui, Y .

1997 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM: DIGEST OF TECHNICAL PAPERS, 1997, :169-172

[4]

Micovic M, 2016, COMP SEMICOND INTEGR, P62

[5] Analysis of the survivability of GaN low-noise amplifiers [J].

Rudolph, Matthias ;

Behtash, Reza ;

Doerner, Ralf ;

Hirche, Klaus ;

Wuerfl, Joachim ;

Heinrich, Wolfgang ;

Traenkle, Gunther .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2007, 55 (01) :37-43

[6]

Suijker EM, 2009, COMP SEMICOND INTEGR, P147

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