Dependence of absolute photon flux on infrared absorbance alteration and surface roughness on photoresist polymers irradiated with vacuum ultraviolet photons emitted from HBr plasma

被引：3

作者：

Zhang, Yan ^{[1
]}

Takeuchi, Takuya ^{[1
]}

Ishikawa, Kenji ^{[1
]}

Hayashi, Toshio ^{[1
]}

Takeda, Keigo ^{[1
]}

Sekine, Makoto ^{[1
]}

Hori, Masaru ^{[1
]}

机构：

[1] Nagoya Univ, Grad Sch Engn, Nagoya, Aichi 4648603, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2017年 / 56卷 / 12期

关键词：

193 NM PHOTORESIST; LINE-EDGE ROUGHNESS; LINEWIDTH ROUGHNESS; HBR/CL-2/O-2; DEGRADATION; REDUCTION; RADIATION; RESISTS; LWR;

D O I：

10.7567/JJAP.56.126503

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The absolute fluxes of vacuum ultraviolet (VUV) photons emitted from HBr plasma were analyzed and the effects of VUV photons on a photoresist polymer in ArF-excimer-laser (193 nm) lithography were quantitatively investigated on the basis of the infrared spectra attributed to the C=O region. The spectral peak intensity assigned to the methacrylic acid (MAA) in the photoresist drastically decreased owing to the loss of this monomer caused by the irradiation of VUV photons at dosages below 16 x 10(16) photons/cm(2). X-ray photoelectron spectroscopy observation showed that the removed monomer moved to the surface and generated volatile products that induced a decrease in film thickness. As a consequence, the surface became rough during the early-stage irradiation at dosages lower than 16 x 10(16) photons/cm(2) owing to the monomer loss of MAA with volatile product formation and subsequent cross-linking reactions. (C) 2017 The Japan Society of Applied Physics

引用

页数：6