60 mW Pulsed and Continuous Wave Operation of GaN-Based Semipolar Green Laser with Characteristic Temperature of 190 K

被引：18

作者：

Sizov, Dmitry ^{[1
]}

Bhat, Rajaram ^{[1
]}

Song, Kechang ^{[1
]}

Allen, Donald ^{[1
]}

Paddock, Barry ^{[1
]}

Coleman, Sean ^{[1
]}

Hughes, Lawrence C. ^{[1
]}

Zah, Chung-en ^{[1
]}

机构：

[1] Corning Inc, Corning, NY 14831 USA

来源：

APPLIED PHYSICS EXPRESS | 2011年 / 4卷 / 10期

关键词：

HIGH-POWER; PLANE GAN; DIODES;

D O I：

10.1143/APEX.4.102103

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We studied characteristic temperatures (T-0) of laser diodes (LDs) grown on semipolar GaN substrates and emitting in the green spectral range. For several semipolar laser designs with and without an electron blocking layer (EBL), T-0 remains higher (161-246 K) than that typically reported for c-plane green LDs. The slope efficiency measured in the pulsed regime is nearly temperature independent. These observations indicate that T-0 is mainly determined by intrinsic quantum well (QW) properties, such as higher differential gain. A high T-0 and a sufficient injection efficiency allow the achievement of a continuous wave output power of 60 mW for an LD without an EBL. (C) 2011 The Japan Society of Applied Physics

引用

页数：3

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