Improvement of oxidation resistance in graphite for MgO-C refractory through surface modification

被引：14

作者：

Cho, Geun-Ho ^{[1
]}

Kim, Eun-Hee ^{[1
]}

Li, Jing ^{[1
]}

Lee, Je-Hyun ^{[1
]}

Jung, Yeon-Gil ^{[1
]}

Byeun, Yun-Ki ^{[2
]}

Jo, Chang-Yong ^{[3
]}

机构：

[1] Changwon Natl Univ, Sch Mat Engn, Chang Won 641773, Gyeongnam, South Korea

[2] POSCO, Tech Res Labs, Pohang Res Lab, Steelmaking Res Grp, Phohang 790300, Gyeongbuk, South Korea

[3] Korea Inst Mat Sci, High Temp Mat Res Grp, Chang Won 641831, Gyeongnam, South Korea

来源：

TRANSACTIONS OF NONFERROUS METALS SOCIETY OF CHINA | 2014年 / 24卷

基金：

新加坡国家研究基金会;

关键词：

refractory; graphite; surface modification; aluminum; coating; MICROSTRUCTURES; ELECTRODES;

D O I：

10.1016/S1003-6326(14)63297-0

中图分类号：

TF [冶金工业];

学科分类号：

0806 ;

摘要：

Graphite, used as a carbon source in a conventional magnesia-carbon (MgO-C) refractory, was modified with an acid reagent, resulting in a negative charge on the surface of graphite, to enhance the coating efficiency of aluminum (Al) phase, which was compared to the pristine graphite through its dispersibity and oxidation behavior. The graphite particles with and without surface modification were added, respecticely, in an Al(NO3)(3) suspension used as a coating reagent, and then filtered at room temperature. The modified graphite shows better disperbility than the pristine graphite, indicating that the coating efficiency of Al precursor is enhanced in the modified graphite. With respect to oxidation behavior, the modified graphite without the coating layer is totally reacted with oxygen at heat treatment of 900 degrees C in air. However, the Al-coated graphite starts to react with oxygen at heat treatment of 900 degrees C and fully reacted with oxygen at heat treatment of 1000 degrees C, showing the gray and white colors, respectively. It is verified that the Al layer is individually and uniformly formed on the surface of graphite and the oxidation resistance of graphite is enhanced owing to the increased coating efficiency of Al precursor.

引用

页码：S119 / S124

页数：6

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