Experimental identification of nitrogen-vacancy complexes in nitrogen implanted silicon

被引:18
作者
Adam, LS [1 ]
Law, ME
Szpala, S
Simpson, PJ
Lawther, D
Dokumaci, O
Hegde, S
机构
[1] Univ Florida, Dept Elect Engn, SWAMP Ctr, Gainesville, FL 32611 USA
[2] Univ Western Ontario, Dept Phys & Astron, London, ON N6A 3K7, Canada
[3] Univ Prince Edward Isl, Dept Phys, Charlottetown, PE C1A 4P3, Canada
[4] IBM Corp, Semicond Res & Dev Ctr, Hopewell Junction, NY 12533 USA
关键词
D O I
10.1063/1.1388882
中图分类号
O59 [应用物理学];
学科分类号
摘要
Nitrogen implantation is commonly used in multigate oxide thickness processing for mixed signal complementary metal-oxide-semiconductor and System on a Chip technologies. Current experiments and diffusion models indicate that upon annealing, implanted nitrogen diffuses towards the surface. The mechanism proposed for nitrogen diffusion is the formation of nitrogen-vacancy complexes in silicon, as indicated by ab initio studies by J. S. Nelson, P. A. Schultz, and A. F. Wright [Appl. Phys. Lett. 73, 247 (1998)]. However, to date, there does not exist any experimental evidence of nitrogen-vacancy formation in silicon. This letter provides experimental evidence through positron annihilation spectroscopy that nitrogen-vacancy complexes indeed form in nitrogen implanted silicon, and compares the experimental results to the ab initio studies, providing qualitative support for the same. (C) 2001 American Institute of Physics.
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收藏
页码:623 / 625
页数:3
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