Source/Drain Engineering for In0.7Ga0.3As N-Channel Metal-Oxide-Semiconductor Field-Effect Transistors. Raised Source/Drain with In situ Doping for Series Resistance Reduction

被引：8

作者：

Gong, Xiao ^{[1
,2
]}

Chin, Hock-Chun ^{[1
]}

Koh, Shao-Ming ^{[1
]}

Wang, Lanxiang ^{[1
,2
]}

Ivana ^{[1
,2
]}

Zhu, Zhu ^{[1
]}

Wang, Benzhong ^{[3
]}

Chia, Ching Kean ^{[3
]}

Yeo, Yee-Chia ^{[1
,2
]}

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore

[2] Natl Univ Singapore, NUS Grad Sch Integrat Sci & Engn, Singapore 117456, Singapore

[3] Agcy Sci Technol & Res, Inst Mat Res & Engn, Singapore 117602, Singapore

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2011年 / 50卷 / 04期

基金：

新加坡国家研究基金会;

关键词：

AMMONIA SURFACE PASSIVATION; HIGH-PERFORMANCE; GATE; MOSFETS; STACK; TECHNOLOGY;

D O I：

10.1143/JJAP.50.04DF01

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this paper, we report N-channel metal-oxide-semiconductor field-effect transistors (N-MOSFETs) featuring in situ doped raised In0.53Ga0.47As source/drain (S/D) regions. This is the first demonstration of such regrowth on an In0.7Ga0.3As channel. After SiON spacer formation, the raised In0.53Ga0.47As S/D structure was formed by selective epitaxy of In0.53Ga0.47As in the S/D regions by metal-organic chemical-vapor deposition (MOCVD). In situ silane SiH4 doping was also introduced to boost the N-type doping concentration in the S/D regions for series resistance R-SD reduction. The raised S/D structure contributes to I-Dsat enhancement for the In0.7Ga0.3As N-MOSFETs. (C) 2011 The Japan Society of Applied Physics

引用

页数：4

共 33 条

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