Atomistic simulation of the effect of trace elements on grain boundary of aluminum

被引:0
作者
Namilae, S [1 ]
Shet, C
Chandra, N
Nieh, TG
机构
[1] Florida State Univ, FAMU FSU Coll Engn, Dept Mech Engn, Tallahassee, FL 32310 USA
[2] Univ Calif Lawrence Livermore Natl Lab, Livermore, CA 94551 USA
来源
SUPERPLASTICITY IN ADVANCED MATERIALS, ICSAM-2000 | 2001年 / 357-3卷
关键词
grain boundary energy; hydrostatic stress; segregation;
D O I
10.4028/www.scientific.net/MSF.357-359.387
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Molecular statics simulations are used in conjunction with the Embedded Atom Method to study the segregation tendency of magnesium and the effect of doping on aluminum symmetric tilt grain boundaries (STGB). It is observed that a state of hydrostatic stress exists predominantly near the grain boundary and influences the segregation energy of magnesium. The origin of hydrostatic stress is explained in terms of local geometrical arrangement of atoms at the grain boundary. The energy of a given grain boundary is found to increase with addition of Mg atoms and the increase depends on the normal distance of the atom from the grain boundary.
引用
收藏
页码:387 / 392
页数:6
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