Annealing effect on the electronic structure and magnetic properties of Mn-doped ZnO films

被引：4

作者：

Jin, J. ^{[1
,2
,3
]}

Zhang, X. Y. ^{[2
,3
]}

Zhou, Y. X. ^{[2
,3
]}

Chang, G. S. ^{[4
]}

机构：

[1] Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China

[2] Fudan Univ, Dept Phys, Surface Phys Lab, Natl Key Lab, Shanghai 200433, Peoples R China

[3] Fudan Univ, Synchrotron Radiat Res Ctr, Shanghai 200433, Peoples R China

[4] Univ Saskatchewan, Dept Phys & Engn Phys, Saskatoon, SK S7N 5E2, Canada

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2012年 / 27卷 / 03期

关键词：

D-D EXCITATIONS; THIN-FILMS; FERROMAGNETISM; SEMICONDUCTOR; SPECTROSCOPY;

D O I：

10.1088/0268-1242/27/3/035012

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report an investigation of the local electronic structure and thermal diffusion mechanism of Zn0.8Mn0.2O epitaxial films by soft x-ray spectroscopy measurements. According to experimental results and establishment of the relationship between electronic structure and magnetic properties, the majority of Mn atoms are in substitutional sites in the as-grown film and the concentration of divalent Mn ions is found to be dominant in the ferromagnetic film, while after being annealed at 400 degrees C for 1 h, Mn atoms diffuse out of the ZnO lattice and accumulate in Mn-related secondary phases with high valence (+3 and/or +4) Mn ions. The formation of the secondary phases is correlated with the suppressed ferromagnetism (FM). The present results suggest that Mn2+ ions play a significant role for the FM in (Zn,Mn)O.

引用

页数：5

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