Electronic structure and magnetism of MnSb2Te4

被引:17
作者
Chen, Li [1 ,2 ]
Wang, Dongchao [2 ]
Shi, Changmin [2 ]
Jiang, Chuan [3 ]
Liu, Hongmei [2 ]
Cui, Guangliang [2 ]
Zhang, Xiaoming [4 ]
Li, Xiaolong [2 ]
机构
[1] Qilu Univ Technol, Sch Elect & Informat Engn, Dept Phys, Jinan 250353, Peoples R China
[2] Linyi Univ, Inst Condensed Matter Phys, Linyi, Shandong, Peoples R China
[3] Natl Instruments, Dept Data Acquisit, Shanghai 201204, Peoples R China
[4] Shandong Univ, Natl Glycoengn Res Ctr, Qingdao 266237, Shandong, Peoples R China
基金
中国国家自然科学基金;
关键词
Crystal structure - Tellurium compounds - Thin films - Ferromagnetic materials - Bismuth compounds - Calculations - Electronic structure - Magnetic semiconductors - Narrow band gap semiconductors - Tensile strain - Antiferromagnetism - Antimony compounds - Energy gap - Semiconducting manganese compounds;
D O I
10.1007/s10853-020-05005-7
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
MnSb2Te4 has the same crystal structure as MnBi2Te4. Whether it is an intrinsic antiferromagnetic TI, quantum anomalous Hall insulator or axion insulator like MnBi2Te4 [CHIN. PHYS. LETT. 36, (2019) 076801] has not been reported yet. The electronic structure and magnetism of MnSb2Te4 have been studied using first-principles calculations. The results show that the MnSb2Te4 is an antiferromagnetic semiconductor with a trivial energy gap ( similar to 0.132 eV). The band gap decreases to 0.057 eV under the tensile strain (1.03a(0), 1.03c(0)). The feature of Weyl semimetal could be presented in MnSb2Te4 with ferromagnetic phase under strain 3%. Thin films (011) are metals with antiferromagnetic order and also metals with ferromagnetic order. Thin film (111) with alternate of thick (1 septuple layer-7 septuple layers) is an intrinsic magnetic semiconductor with a trivial energy gap (0.002-0.344 eV) rather than an intrinsic quantum anomalous Hall insulator or axion insulator.
引用
收藏
页码:14292 / 14300
页数:9
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