Point defect determination by eliminating frequency dispersion in C-V measurement for AlGaN/GaN heterostructure

被引：5

作者：

Li, Liang ^{[1
]}

Yang, Lin-An ^{[1
]}

Zhang, Jin-Cheng ^{[1
]}

Zhang, Lin-Xia ^{[1
]}

Dang, Li-Sha ^{[1
]}

Kuang, Qian-Wei ^{[1
]}

Hao, Yue ^{[1
]}

机构：

[1] Xidian Univ, State Key Discipline Lab Wide Band Gap Semicond T, Sch Microelect, Xian 710071, Peoples R China

来源：

SOLID-STATE ELECTRONICS | 2012年 / 68卷

关键词：

Bulk defect; AlGaN/GaN; Frequency dispersion; Capacitance-voltage characteristic; STATES; FILMS;

D O I：

10.1016/j.sse.2011.11.001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, an improved small-signal equivalent model is introduced to eliminate frequency dispersion phenomenon in capacitance-voltage (C-V) measurement, and a new mathematic method is proposed to calculate the amount of bulk defect existing in the GaN buffer layer. Compared with photoluminescence (PL) and high resolution X-ray diffraction (HRXRD) data, it is identified that the main component of the bulk defect concentration is made up of the point defect concentration, rather than the edge dislocation concentration. All these results prove the accuracy of the improved C-V model and feasibility of the mathematic model. (C) 2011 Elsevier Ltd. All rights reserved.

引用

收藏

页码：98 / 102

页数：5

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