Measurement of Internal Electric Field in GaN-Based Light-Emitting Diodes

被引：41
作者：
Park, Su-Ik [1 ]
Lee, Jong-Ik [1 ]
Jang, Dong-Hyun [1 ]
Kim, Hyun-Sung [1 ]
Shin, Dong-Soo [2 ]
Ryu, Han-Youl [3 ]
Shim, Jong-In [1 ]
机构：
[1] Hanyang Univ, Dept Elect & Commun Engn, Ansan 426791, South Korea
[2] Hanyang Univ, Dept Appl Phys, Ansan 426791, South Korea
[3] Inha Univ, Dept Phys, Inchon 402751, South Korea
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 2012年 / 48卷 / 04期
关键词：
Electroreflectance; GaN; light-emitting diodes; modulation spectroscopy; photocurrent; piezoelectric field; polarization; strain; PIEZOELECTRIC FIELD; QUANTUM-WELLS; ELECTROREFLECTANCE; POLARIZATION; SPECTROSCOPY; PHOTOCURRENT; CAPACITANCE; DEPENDENCE; SPECTRA; BLUE;
D O I：
10.1109/JQE.2012.2186610
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The internal electric field due to the piezoelectric effect in an InGaN/GaN multiple quantum-well structure is measured via photoluminescence (PL), electroreflectance (ER), and photocurrent (PC) spectroscopies, and the measurement results are compared with each other and with theoretically calculated values. The flat-band voltage is estimated by measuring the applied bias voltage that induces the maximum in PL peak energy by the quantum-confined Stark effect, 180 phase shift in the ER spectrum, and the smallest band tail state in the PC spectrum. The internal electric fields estimated by the PL, PC, and ER spectra are -1.81, -2.12 +/- 0.14, and -2.04 MV/cm, respectively. The measured piezoelectric fields are in good agreement with theoretically calculated values. Possible factors affecting piezoelectric field measurements are discussed from various perspectives.
引用
收藏
页码：500 / 506
页数：7
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