Electronic band structure of AgCd2GaS4:: theory and experiment

被引:32
作者
Reshak, Ali H. [1 ,2 ]
Auluck, S. [3 ]
Kityk, I. V. [1 ,4 ]
Perona, Arnaud [5 ]
Claudet, Bernard [5 ]
机构
[1] Univ S Bohemia, Inst Phys Biol, Nove Hrady 37333, Czech Republic
[2] Acad Sci Czech Republ, Inst Syst Biol & Ecol, Nove Hrady 37333, Czech Republic
[3] Indian Inst Technol, Dept Phys, Kanpur 208016, Uttar Pradesh, India
[4] Silesian Tech Univ, Dept Chem, PL-44100 Gliwice, Poland
[5] Univ Perpignan, Lab ELIAUS, F-66100 Perpignan, France
关键词
D O I
10.1088/0953-8984/20/32/325213
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We report theoretical calculations of the band structure of AgCd2GaS4 using the full-potential linear augmented plane wave method and experimental measurements of the valence band x-ray photoelectron spectroscopy. We find that the valence band maximum and the conduction band minimum are located at the Gamma point of the Brillouin zone resulting in a direct energy gap of 1.0 eV compared to our measured experimental value of 2.15 eV. Our analysis of the partial density of states shows that there is a weak covalent interaction between Ag and Ga atoms and between Ag and Cd atoms, and a substantial covalent interaction between Ag and S atoms. Thus the Ga-Ag and Cd-Ag bonds are basically of ionic character, and Ag-S bonds are of covalent character. The theoretical results of the density of states are in agreement with the valence band x-ray photoelectron spectroscopy measurements with respect to spectral peak positions. We have analyzed the calculated density of states and find a strong/weak hybridization between the Ag, Cd, Ga and S states in the valence and conduction bands.
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页数:5
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