Large-Format HgCdTe Dual-Band Long-Wavelength Infrared Focal-Plane Arrays

被引：20
|
作者：
Smith, E. P. G. [1 ]
Venzor, G. M. [1 ]
Gallagher, A. M. [1 ]
Reddy, M. [1 ]
Peterson, J. M. [1 ]
Lofgreen, D. D. [1 ]
Randolph, J. E. [1 ]
机构：
[1] Raytheon Vis Syst, Goleta, CA USA
来源：
JOURNAL OF ELECTRONIC MATERIALS | 2011年 / 40卷 / 08期
关键词：
HgCdTe; infrared detectors; molecular-beam epitaxy (MBE); dual-band long-wavelength infrared (L/LWIR); DETECTORS; MWIR;
D O I：
10.1007/s11664-011-1626-9
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Raytheon Vision Systems (RVS) continues to further its capability to deliver state-of-the-art high-performance, large-format, HgCdTe focal-plane arrays (FPAs) for dual-band long-wavelength infrared (L/LWIR) detection. Specific improvements have recently been implemented at RVS in molecular-beam epitaxy (MBE) growth and wafer fabrication and are reported in this paper. The aim of the improvements is to establish producible processes for 512 x 512 30-mu m-unit-cell L/LWIR FPAs, which has resulted in: the growth of triple-layer heterojunction (TLHJ) HgCdTe back-to-back photodiode detector designs on 6 cm x 6 cm CdZnTe substrates with 300-K Fourier-transform infrared (FTIR) cutoff wavelength uniformity of +/- 0.1 mu m across the entire wafer; demonstration of detector dark-current performance for the longer-wavelength detector band approaching that of single-color liquid-phase epitaxy (LPE) LWIR detectors; and uniform, high-operability, 512 x 512 30-mu m-unit-cell FPA performance in both LWIR bands.
引用
收藏
页码：1630 / 1636
页数：7
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