Electro-optic nature of ultrafast pump-probe reflectivity response from multilayer semiconductor heterostructures

被引：14

作者：

Glinka, Y. D. ^{[1
,2
]}

Tolk, N. H. ^{[3
]}

Liu, X. ^{[4
]}

Sasaki, Y. ^{[4
]}

Furdyna, J. K. ^{[4
]}

机构：

[1] USA, Aviat & Missile RDEC, Redstone Arsenal, AL 35809 USA

[2] Univ Alabama, Micro Devices Ctr, Huntsville, AL 35899 USA

[3] Vanderbilt Univ, Dept Phys & Astron, Nashville, TN 37235 USA

[4] Univ Notre Dame, Dept Phys, Notre Dame, IN 46556 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 103卷 / 04期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2840139

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We provide the evidence for the eiectro-optic nature of the transient reflectivity change (TRC) response from GaAs/GaSb/InAs heterostructures measured in ultrafast pump-probe experiments. The evidence is based on the correlation between TRC and the transient electric-field-induced second harmonic generation change signals, which have been measured simultaneously. The TRC signal is induced through the second- and third-order nonlinearities by the interfacial dc electric fields originating from the charge separation of pump-excited carriers among the layers. The effect of the interface type between GaSb and InAs layers on the interfacial field strength was analyzed. (c) 2008 American Institute of Physics.

引用

页数：10

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