Electronic States with Nontrivial Topology in Dirac Materials

被引：0
|
作者：
Turkevich, R. V. [1 ,2 ]
Perov, A. A. [2 ]
Protogenov, A. P. [1 ]
Chulkov, E. V. [3 ,4 ,5 ]
机构：
[1] Russian Acad Sci, Inst Appl Phys, Nizhnii Novgorod 603950, Russia
[2] Lobachevsky State Univ Nizhny Novgorod, Nizhnii Novgorod 603950, Russia
[3] DIPC, San Sebastian 20018, Basque Country, Spain
[4] Univ Basque Country, CFM MPC, Ctr Fis Mat, Dept Fis Mat, San Sebastian 20080, Spain
[5] Univ Basque Country, CSIC, Ctr Mixto, San Sebastian 20080, Spain
来源：
JETP LETTERS | 2017年 / 106卷 / 03期
关键词：
TRANSPORT; VARIABLES; CHAIN;
D O I：
10.1134/S0021364017150115
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The theoretical studies of phase states with a linear dispersion of the spectrum of low-energy electron excitations have been reviewed. Some main properties and methods of experimental study of these states in so-called Dirac materials have been discussed in detail. The results of modern studies of symmetry-protected electronic states with nontrivial topology have been reported. Combination of approaches based on geometry with homotopic topology methods and results of condensed matter physics makes it possible to clarify new features of topological insulators, as well as Dirac and Weyl semimetals.
引用
收藏
页码：188 / 198
页数：11
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