Quantum-confined Stark effects in a single GaN quantum dot

被引：0

作者：

Liu Yong-Hui ^{[1
]}

Wang Xue-Feng ^{[1
]}

Li Shu-Shen ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2008年 / 25卷 / 07期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Using analytical expressions for the polarization field in GaN quantum dot, and an approximation by separating the potential into a radial and an axial, we investigate theoretically the quantum-confined Stark effects. The electron and hole energy levels and optical transition energies are calculated in the presence of an electric field in different directions. The results show that the electron and hole energy levels and the optical transition energies can cause redshifts for the lateral electric field and blueshifts for the vertical field. The rotational direction of electric field can also change the energy shift.

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页码：2628 / 2630

页数：3

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