Characterization of defects in InGaAsN grown by molecular-beam epitaxy

被引：0

作者：

Fleck, A ^{[1
]}

Thompson, DA ^{[1
]}

Robinson, BJ ^{[1
]}

Yuan, LX ^{[1
]}

机构：

[1] McMaster Univ, Ctr Electrophoton Mat & Devices, Hamilton, ON L8S 4L7, Canada

来源：

2001 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS | 2001年

关键词：

D O I：

10.1109/ICIPRM.2001.929112

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Bulk layers of InGaAsN on GaAs and GaAs/InGaAsN/GaAs quantum wells with small nitrogen concentration (less than or equal to 2% N) have been grown by gas source molecular beam epitaxy with a radio frequency discharge N source. The material has been characterized using x-ray diffraction, secondary ion mass spectrometry (SIMS), photoluminescence (PL) and Hall effect measurement with the intention of understanding and overcoming the mechanism responsible for the optical and electrical defects in the material. Both the PL and electrical performance of InGaAsN can be improved with thermal annealing.

引用

页码：280 / 283

页数：4

共 10 条

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