Effective mass of InN estimated by Raman scattering

被引：8
作者：
Kim, Jung Gon [1 ]
Kamei, Yasuhito [1 ]
Hasuike, Noriyuki [1 ]
Harima, Hiroshi [1 ]
Kisoda, Kenji [2 ]
Sasamoto, Kouhei [3 ]
Yamamoto, Akio [3 ]
机构：
[1] Kyoto Inst Technol, Kyoto 6068585, Japan
[2] Wakayama Univ, Wakayama 6408510, Japan
[3] Univ Fukui, Bunkyo Ku, Fukui 9108507, Japan
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8 | 2010年 / 7卷 / 7-8期
关键词：
InN; MOVPE; Raman spectra; plasmon-phonon coupling; HEXAGONAL INN; MOBILITY; PHONONS;
D O I：
10.1002/pssc.200983567
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We have estimated the longitudinal effective mass (m(//)) of electron in n-type InN films by Raman scattering. The samples were grown by MOVPE (metal organic vapor phase epitaxy) with free carrier concentration of n = 6.7x10(18) -9.9x10(18) cm(-3) according to Hall measurement. A weak Raman signal observed at similar to 430 cm(-1) at room temperature was sharpened and shifted to higher frequency toward the A1(TO)-phonon mode at 447 cm(-1) with increasing n. This mode was assigned to the lower branch (L) of the longitudinal-optic-phononplasmon-coupled (LOPC) mode. The line shape was care-fully analyzed by a semi-classical line-shape fitting analysis assuming deformation potential and electro-optic coupling mechanisms for the light scattering process. A line-shape fitting analysis was conducted by adjusting three major parameters; electron density, effective mass and plasmon damping rate. The analysis well reproduced values of electron density and mobility deduced by Hall measurement. Electron effective mass of m(//)*/m(0) = 0.05 (+/- 0.01) was also obtained as the best-fit parameter. The result agrees well with previous data obtained by other optical methods. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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页数：3
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