Chalcogen passivation of GaAs(111)B surfaces

被引：0
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作者：
Suga, Takayuki [1 ]
Goto, Shunji [1 ]
Ohtake, Akihiro [2 ]
Nakamura, Jun [1 ]
机构：
[1] Univ Electrocommun UEC Tokyo, Dept Engn Sci, Tokyo, Japan
[2] Natl Inst Mat Sci, Tsukuba, Ibaraki, Japan
来源：
2019 COMPOUND SEMICONDUCTOR WEEK (CSW) | 2019年
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
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页数：1
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