Electron Mobility Degradation and Interface Dipole Formation in Direct-Contact HfO2/Si Metal-Oxide-Semiconductor Field-Effect Transistors

被引：7

作者：

Miyata, Noriyuki ^{[1
]}

Ishii, Hiroyuki ^{[1
]}

Itatani, Taro ^{[1
]}

Yasuda, Tetsuji ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan

来源：

APPLIED PHYSICS EXPRESS | 2011年 / 4卷 / 10期

基金：

日本学术振兴会;

关键词：

PHONON-SCATTERING; REMOTE PHONON; MOSFETS;

D O I：

10.1143/APEX.4.101101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Metal-oxide-semiconductor field-effect transistors with HfO2/thickness-graded SiO2/Si structures were fabricated to examine what effect the electric dipoles at the direct-contact HfO2/Si interfaces have on electron channel mobility. The degradation in mobility observed for direct-contact HfO2/Si devices could not be ascribed to dipole scattering, but to remote Coulomb scattering due to oxide charges in the HfO2 layer. Our results suggest that interface dipoles are not a major concern in terms of the mobility criterion. (C) 2011 The Japan Society of Applied Physics

引用

页数：3

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