Nanowire spintronics for storage class memories and logic

被引：83
作者：
Hrkac, G. [1 ]
Dean, J. [1 ]
Allwood, D. A. [1 ]
机构：
[1] Univ Sheffield, Dept Mat Sci & Engn, Sheffield S1 3JD, S Yorkshire, England
来源：
PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES | 2011年 / 369卷 / 1948期
基金：
英国工程与自然科学研究理事会;
关键词：
magnetic nanowire; domain-wall propagation; domain-wall memory; domain-wall logic; MAGNETIC DOMAIN-WALL; SHIFT REGISTER; DYNAMICS; MOTION; INJECTION; FIELD; PROPAGATION; WIRE; MAGNETORESISTANCE; FERROMAGNETS;
D O I：
10.1098/rsta.2011.0138
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
Patterned magnetic nanowires are extremely well suited for data storage and logic devices. They offer non-volatile storage, fast switching times, efficient operation and a bistable magnetic configuration that are convenient for representing digital information. Key to this is the high level of control that is possible over the position and behaviour of domain walls (DWs) in magnetic nanowires. Magnetic random access memory based on the propagation of DWs in nanowires has been released commercially, while more dynamic shift register memory and logic circuits have been demonstrated. Here, we discuss the present standing of this technology as well as reviewing some of the basic DW effects that have been observed and the underlying physics of DW motion. We also discuss the future direction of magnetic nanowire technology to look at possible developments, hurdles to overcome and what nanowire devices may appear in the future, both in classical information technology and beyond into quantum computation and biology.
引用
收藏
页码：3214 / 3228
页数：15
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