Integration of power devices in advanced mixed signal analog BiCMOS technology

被引：15
作者：
Efland, TR [1 ]
机构：
[1] Texas Instruments Inc, Adv Analog Prod, Dallas, TX 75266 USA
来源：
MICROELECTRONICS JOURNAL | 2001年 / 32卷 / 5-6期
关键词：
power devices; BiCMOS technology; process roadmaps;
D O I：
10.1016/S0026-2692(01)00011-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper outlines lateral power devices in Power BiCMOS (PBC) technologies where increasing application circuit complexity is driving the need to maintain compatibility with advanced CMOS technology and integration by parts remains a challenge. Different device strategies and process roadmaps are required to maintain competitive products. The need for compatibility with these leading edge CMOS technologies complicates the push for reduced complexity. Product application drivers, device styles combined with process integration challenges and methods, and the future problems with shrinking geometry are discussed. (C) 2001 Published by Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：409 / 418
页数：10
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