Characterization of iridium thin films for TES microcalorimeters

被引：8

作者：

Bogorin, D. F. ^{[1
]}

Galeazzi, M. ^{[1
]}

机构：

[1] Univ Miami, Dept Phys, Miami, FL 33152 USA

来源：

JOURNAL OF LOW TEMPERATURE PHYSICS | 2008年 / 151卷 / 1-2期

关键词：

transition edge sensors; iridium; superconductor; critical current;

D O I：

10.1007/s10909-007-9622-4

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We are developing transition edge sensors (TES) using single layer iridium (Ir) as the detector and deposited tin (Sn) as the absorber. We obtained good Ir devices with reproducible and uniform transition temperature around 120 mK, transition widths of 1-2 mK, residual resistivity ratio (RRR) between 1.8-3 and high sensitivity alpha. Our Ir films are obtained using radio frequency (RF) magnetron sputtering and photolithography. In this paper we present a full low temperature characterization of the Ir films.

引用

页码：167 / 172

页数：6

共 7 条

[1]

GALEAZZI M, TES3 TALK FLUX FLOW

[2] SUPERCONDUCTIVITY OF IRIDIUM [J].

HEIN, RA ;

CORENZWIT, E ;

GEBALLE, TH ;

GIBSON, JW ;

MATTHIAS, BT .

PHYSICAL REVIEW LETTERS, 1962, 8 (10) :408-&

[3]

HOLDEMANETAL LB, 1978, J PHYS C SOLID STATE, V6, P608

[4] Thermal-response time of superconducting transition-edge microcalorimeters [J].

Irwin, KD ;

Hilton, GC ;

Wollman, DA ;

Martinis, JM .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (08) :3978-3985

[5] Comparison of superconducting transition characteristics of two iridium/gold bilayer transition edge sensor devices [J].

Kunieda, Y ;

Fukuda, D ;

Ohno, M ;

Takahashi, H ;

Nakazawa, M ;

Inou, T ;

Ataka, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2004, 43 (5A) :2742-2744

[6]

SOULEN RJ, 1973, J LOW TEMP PHYS, V13, P498

[7]

TINKHAM M, 1996, INTRO SUPERCONDUCTIV, pCH4

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