GaN photonic-crystal surface-emitting laser at blue-violet wavelengths

被引：311

作者：

Matsubara, Hideki ^{[1
,2
]}

Yoshimoto, Susumu ^{[1
]}

Saito, Hirohisa ^{[1
]}

Yue, Jianglin ^{[1
,2
]}

Tanaka, Yoshinori ^{[1
,2
]}

Noda, Susumu ^{[1
,2
,3
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6158510, Japan

[2] Japan Sci & Technol Agcy, Kyoto 6158510, Japan

[3] Kyoto Univ, Photon & Elect Sci & Engn Ctr, Kyoto 6158510, Japan

来源：

SCIENCE | 2008年 / 319卷 / 5862期

关键词：

D O I：

10.1126/science.1150413

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Shorter- wavelength surface- emitting laser sources are important for a variety of fields, including photonics, information processing, and biology. We report on the creation of a current- driven blueviolet photonic- crystal surface- emitting laser. We have developed a fabrication method, named "air holes retained overgrowth," in order to construct a two- dimensional gallium nitride ( GaN)/air photonic- crystal structure. The resulting periodic structure has a photonic- crystal band- edge effect sufficient for the successful operation of a current- injection surface- emitting laser. This represents an important step in the development of laser sources that could be focused to a size much less than the wavelength and be integrated two- dimensionally at such short wavelengths.

引用

页码：445 / 447

页数：3

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