Oblique-angle sputtered AlN nanocolumnar layer as a buffer layer in GaN-based LED

被引：11

作者：

Chen, Lung-Chien ^{[1
]}

Tien, Ching-Ho ^{[1
]}

Liao, Wei-Chian ^{[1
]}

Luo, Yi-Min ^{[1
]}

机构：

[1] Natl Taipei Univ Technol, Dept Electroopt Engn, Taipei 106, Taiwan

来源：

JOURNAL OF LUMINESCENCE | 2011年 / 131卷 / 06期

关键词：

Oblique-angle deposition; AlN nanocolumnar layer; GaN-based LED; LIGHT-EMITTING-DIODES; VAPOR-PHASE EPITAXY; THIN-FILMS; PILLAR MICROSTRUCTURE; OPTICAL-PROPERTIES; NUCLEATION LAYERS; OUTPUT POWER; GROWTH; DEPOSITION;

D O I：

10.1016/j.jlumin.2011.02.016

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

This work presents an aluminum nitride (AlN) nanocolumnar layer sputtered at various oblique angles and its application as a buffer layer for GaN-based light-emitting diodes (LEDs) that are fabricated on sapphire substrates. The OA-AlN nanocolumnar layer has a diameter of about 30-60 nm. The GaN-based LED structure is perpendicularly extended from the OA-AIN nanocolumnar layer. Then, the nanocolumnar structure is merged into p-GaN layer to form a mesa structure with a diameter of about 200-600 nm on the surface of the GaN-based LED. Moreover, optical characteristics of the LED were studied using photoluminescence, along with the blue-shifts observed as well. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：1234 / 1238

页数：5

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