Determination of the electron-hole pair creation energy in Al0.8Ga0.2As

被引：12

作者：

Barnett, A. M. ^{[1
]}

Lees, J. E. ^{[1
]}

Bassford, D. J. ^{[1
]}

Ng, J. S. ^{[2
]}

机构：

[1] Univ Leicester, Dept Phys & Astron, Space Res Ctr, Leicester LE1 7RH, Leics, England

[2] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

来源：

JOURNAL OF INSTRUMENTATION | 2012年 / 7卷

关键词：

X-ray detectors; Materials for solid-state detectors; Spectrometers; Space instrumentation; X-RAY-DETECTORS; TEMPERATURE-DEPENDENCE; GALLIUM-ARSENIDE; SILICON-CARBIDE; NOISE-ANALYSIS; FANO FACTOR; GENERATION;

D O I：

10.1088/1748-0221/7/06/P06016

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The average energy consumed in the creation of an electron-hole pair (commonly called the electron-hole pair creation energy) in the compound semiconductor Al0.8Ga0.2As has been experimentally measured for the first time at X-ray energies using Fe-55 and Cd-109 radioisotope sources and a GaAs X-ray photodiode as a reference detector. The value measured (5.1 eV +/- 0.08 eV at 294 K) is compared to values previously estimated in the literature.

引用

页数：9

共 28 条

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