Tunneling under pressure: High-pressure studies of vertical transport in semiconductor heterostructures

被引：11
作者：
Klipstein, PC [1 ]
机构：
[1] Univ Oxford, Clarendon Lab, Dept Phys, Oxford OX1 3PU, England
来源：
HIGH PRESSURE IN SEMICONDUCTOR PHYSICS II | 1998年 / 55卷
关键词：
D O I：
10.1016/S0080-8784(08)60080-0
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：45 / 116
页数：72
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