Recent Progress in High-Luminance Quantum Dot Light-Emitting Diodes

被引:19
作者
Rhee, Seunghyun [1 ]
Kim, Kyunghwan [1 ]
Roh, Jeongkyun [2 ]
Kwak, Jeonghun [1 ]
机构
[1] Seoul Natl Univ, Interuniv Semicond Res Ctr ISRC, Dept Elect & Comp Engn, Seoul 08826, South Korea
[2] Pusan Natl Univ, Dept Elect Engn, Busan 46241, South Korea
基金
新加坡国家研究基金会;
关键词
Quantum dots; High luminance; QLED; QD laser diode; HOLE TRANSPORT LAYER; TURN-ON-VOLTAGE; HIGH-EFFICIENCY; OPTICAL GAIN; PERFORMANCE; NANOCRYSTALS; DEVICES; BRIGHT; ELECTROLUMINESCENCE; DEGRADATION;
D O I
10.3807/COPP.2020.4.3.161
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Colloidal quantum dots (QDs) have gained tremendous attention as a key material for highly advanced display technologies. The performance of QD light-emitting diodes (QLEDs) has improved significantly over the past two decades, owing to notable progress in both material development and device engineering. The brightness of QLEDs has improved by more than three orders of magnitude from that of early-stage devices, and has attained a value in the range of traditional inorganic LEDs. The emergence of high-luminance (HL) QLEDs has induced fresh demands to incorporate the unique features of QDs into a wide range of display applications, beyond indoor and mobile displays. Therefore it is necessary to assess the present status and prospects of HL-QLEDs, to expand the application domain of QD-based light sources. As part of this study, we review recent advances in HL-QLEDs. In particular, based on reports of brightness exceeding 105 cd/m(2), we have summarized the major approaches toward achieving high brightness in QLEDs, in terms of material development and device engineering. Furthermore, we briefly introduce the recent progress achieved toward QD laser diodes, being the next step in the development of HL-QLEDs. This review provides general guidelines for achieving HL-QLEDs, and reveals the high potential of QDs as a universal material solution that can enable realization of a wide range of display applications.
引用
收藏
页码:161 / 173
页数:13
相关论文
共 82 条
[1]   CdSe/ZnS quantum dot films for high performance flexible lighting and display applications [J].
Altintas, Yemliha ;
Genc, Sinan ;
Talpur, Mohammad Younis ;
Mutlugun, Evren .
NANOTECHNOLOGY, 2016, 27 (29)
[2]   Single-step synthesis of quantum dots with chemical composition gradients [J].
Bae, Wan Ki ;
Char, Kookheon ;
Hur, Hyuck ;
Lee, Seonghoon .
CHEMISTRY OF MATERIALS, 2008, 20 (02) :531-539
[3]  
Bae WK, 2019, KOREAN J CHEM ENG, V36, P173
[4]   R/G/B/Natural White Light Thin Colloidal Quantum Dot-Based Light-Emitting Devices [J].
Bae, Wan Ki ;
Lim, Jaehoon ;
Lee, Donggu ;
Park, Myeongjin ;
Lee, Hyunkoo ;
Kwak, Jeonghun ;
Char, Kookheon ;
Lee, Changhee ;
Lee, Seonghoon .
ADVANCED MATERIALS, 2014, 26 (37) :6387-6393
[5]   Controlling the influence of Auger recombination on the performance of quantum-dot light-emitting diodes [J].
Bae, Wan Ki ;
Park, Young-Shin ;
Lim, Jaehoon ;
Lee, Donggu ;
Padilha, Lazaro A. ;
McDaniel, Hunter ;
Robel, Istvan ;
Lee, Changhee ;
Pietryga, Jeffrey M. ;
Klimov, Victor I. .
NATURE COMMUNICATIONS, 2013, 4
[6]   Controlled Alloying of the Core-Shell Interface in CdSe/CdS Quantum Dots for Suppression of Auger Recombination [J].
Bae, Wan Ki ;
Padilha, Lazaro A. ;
Park, Young-Shin ;
McDaniel, Hunter ;
Robel, Istvan ;
Pietryga, Jeffrey M. ;
Klimov, Victor I. .
ACS NANO, 2013, 7 (04) :3411-3419
[7]   Alloyed semiconductor quantum dots: Tuning the optical properties without changing the particle size [J].
Bailey, RE ;
Nie, SM .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2003, 125 (23) :7100-7106
[8]   NiO as an inorganic hole-transporting layer in quantum-dot light-emitting devices [J].
Caruge, Jean-Michel ;
Halpert, Jonathan E. ;
Bulovic, Vladimir ;
Bawendi, Moungi G. .
NANO LETTERS, 2006, 6 (12) :2991-2994
[9]   Unraveling the Origin of Operational Instability of Quantum Dot Based Light-Emitting Diodes [J].
Chang, Jun Hyuk ;
Park, Philip ;
Jung, Heeyoung ;
Jeong, Byeong Guk ;
Hahm, Donghyo ;
Nagamine, Gabriel ;
Ko, Jongkuk ;
Cho, Jinhan ;
Padilha, Lazaro A. ;
Lee, Doh C. ;
Lee, Changhee ;
Char, Kookheon ;
Bae, Wan Ki .
ACS NANO, 2018, 12 (10) :10231-10239
[10]   Nanostructure and device architecture engineering for high-performance quantum-dot light-emitting diodes [J].
Chen, Fei ;
Guan, Zhongyuan ;
Tang, Aiwei .
JOURNAL OF MATERIALS CHEMISTRY C, 2018, 6 (41) :10958-10981